26NM60N资料datasheet下载行情报价-114ic电子网

首页 >26NM60>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业
26NM60N	文件：697.79 Kbytes Page：14 Pages	N-channel 600 V, 0.160 廓, 19 A PowerFLAT??8x8 HV ultra low gate charge MDmesh??II Power MOSFET Description ThisdeviceisanN-channelMDmesh™VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
STB26NM60N	文件：314.04 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=165mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
STB26NM60N	文件：1.14259 Mbytes Page：23 Pages	N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
STB26NM60ND	文件：314.2 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=21A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=175mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
STB26NM60ND	文件：1.35849 Mbytes Page：23 Pages	Lowinputcapacitanceandgatecharge Description TheseFDmesh™IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
STF26NM60N	文件：1.14259 Mbytes Page：23 Pages	N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
STF26NM60N	文件：310.89 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=165mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
STF26NM60N	文件：1.15827 Mbytes Page：11 Pages	N-Channel650-V(D-S)SuperJunctionMOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司
STF26NM60ND	文件：1.35849 Mbytes Page：23 Pages	Lowinputcapacitanceandgatecharge Description TheseFDmesh™IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
STF26NM60N-H	文件：707.63 Kbytes Page：12 Pages	N-channel600V,0.135??20AMDmesh??IIPowerMOSFETinTO-220FP Description ThisseriesofdevicesimplementssecondgenerationMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemandingh	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
STFI26NM60N	文件：679.01 Kbytes Page：12 Pages	N-channel600V,0.135,20AMDmeshIIPowerMOSFETinPAKFPpackage ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationof MDmesh™technology. ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
STI26NM60N	文件：1.14259 Mbytes Page：23 Pages	N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
STI26NM60N	文件：358.69 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
STL26NM60N	文件：697.79 Kbytes Page：14 Pages	N-channel600V,0.160廓,19APowerFLAT??8x8HVultralowgatechargeMDmesh??IIPowerMOSFET Description ThisdeviceisanN-channelMDmesh™VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
STP26NM60N	文件：1.12508 Mbytes Page：24 Pages	N-channel600V,0.135廓typ.,20AMDmesh??IIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
STP26NM60N	文件：1.14259 Mbytes Page：23 Pages	N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
STP26NM60N	文件：317.35 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
STP26NM60ND	文件：320.69 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
STP26NM60ND	文件：1.35849 Mbytes Page：23 Pages	Lowinputcapacitanceandgatecharge Description TheseFDmesh™IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
STW26NM60	文件：233.16 Kbytes Page：9 Pages	N-CHANNEL600V-0.125ohm-26ATO-247Zener-ProtectedMDmeshTMPowerMOSFET DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团

12 >>>

详细参数

型号：
26NM60
制造商：
STMICROELECTRONICS
制造商全称：
STMicroelectronics
功能描述：
N-channel 600 V, 0.160 ??, 19 A PowerFLATa?￠ 8x8 HV ultra low gate charge MDmesha?￠ II Power MOSFET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市恒创达实业有限公司	26NM60N	ST/进口原	17+	220-220F	6200		询价
深圳市鹏和科技有限公司	26NM60N	ST/进口原	2022+	220-220F	5000	只做原装公司现货	询价
深圳市百视威讯电子科技有限公司	26NM60N		23+	N/A	36000	正品授权货源可靠	询价
深圳市科恒伟业电子有限公司	26NM60N	ST	1926+	TO-220F	6852	只做原装正品现货!或订货假一赔十!	询价
深圳兆威电子有限公司	26NM60N	VB	2019	TO-220FP	55000	绝对原装正品假一罚十!	询价
中天科工半导体（深圳）有限公司	26NM60N	ST	20+	220-220F	38560	原装优势主营型号-可开原型号增税票	询价
深圳市晴轩时代电子有限公司	26NM60N	ST	21+	TO220	8800	公司只做原装正品	询价
深圳市大源实业科技有限公司	26NM60N	ST	22+	TO220	262745	优势价格原装现货提供BOM一站式配单服务	询价
深圳市正纳电子有限公司	26NM60N	ST(意法)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市珩瑞科技有限公司	26NM60N	ST	21+	TO220	10000	原装,品质保证,请来电咨询	询价

更多26NM60供应商更新时间2024-4-28 8:30:00

详细参数

相关规格书

相关库存