零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
26N90 | HiPerFET Power MOSFETs HiPerFET™PowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Appl | IXYS IXYS Integrated Circuits Division | ||
HiPerFETPowerMOSFETs HiPerFET™PowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Appl | IXYS IXYS Integrated Circuits Division | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtrrFastIntrinsicDiode Features ●Internationalstandardpackage ●miniBLOC,withAluminiumnitrideisolation ●LowRDS(ON)HDMOSTMprocess ●AvalancheRated ●Lowpackageinductance ●Fastintrinsicdiode Advantages ●Lowgate | IXYS IXYS Integrated Circuits Division | |||
HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtrrFastIntrinsicDiode Features ●Internationalstandardpackage ●miniBLOC,withAluminiumnitrideisolation ●LowRDS(ON)HDMOSTMprocess ●AvalancheRated ●Lowpackageinductance ●Fastintrinsicdiode Advantages ●Lowgate | IXYS IXYS Integrated Circuits Division | |||
HiPerFETTMPowerMOSFETsSingleDieMOSFET | IXYS IXYS Integrated Circuits Division | |||
HiPerFETPowerMOSFETs HiPerFET™PowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Appl | IXYS IXYS Integrated Circuits Division | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |
详细参数
- 型号:
26N90
- 制造商:
IXYS
- 制造商全称:
IXYS Corporation
- 功能描述:
HiPerFET Power MOSFETs
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IXYS |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
KONICA |
22+ |
QFP |
23524 |
原装正品现货,可开13个点税 |
询价 | ||
ST |
23+ |
模块 |
16900 |
支持样品,原装现货,提供技术支持! |
询价 | ||
ST |
22+ |
模块 |
16900 |
正规渠道,只有原装! |
询价 | ||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
询价 | ||
ST |
22+ |
模块 |
16900 |
支持样品 原装现货 提供技术支持! |
询价 | ||
17 |
2021+ |
DFN-85X6 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
17 |
23+ |
DFN-85X6 |
6000 |
专注配单,只做原装进口现货 |
询价 | ||
17 |
23+ |
DFN-85X6 |
6000 |
专注配单,只做原装进口现货 |
询价 | ||
17 |
22+ |
DFN-85X6 |
1155 |
原装现货假一赔十 |
询价 |
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