首页 >2322SBYNZ-M>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
BandpassFilter | KRKR Electronics, Inc. KR Electronics, Inc. | |||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯(邦士) | |||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯(邦士) | |||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯(邦士) | |||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯(邦士) | |||
HighCurrentToroidInductorsHorizontalorverticalmount | BournsBourns Inc. 伯恩斯(邦士) | |||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯(邦士) | |||
2A550k/1.1MHzSynchronousPWM | AIC AIC | |||
N-Channel30-V(D-S)MOSFET | AnalogPower Analog Power | |||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | |||
N-ChannelMOSFET | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
N-ChannelMOSFET | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
Capableof1.8Vgatedrive,SimpleDriveRequirement | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | |||
N-ChannelEnhancementModeMOSFET Features •20V/1.5A,RDS(ON)=195mΩ(typ.)@VGS=4.5V RDS(ON)=295mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPower | ANPECAnpec Electronics Corp 茂达电子 | |||
N-ChannelEnhancementModeMOSFET Features •20V/1.5A, RDS(ON)=195mΩ(typ.)@VGS=4.5V RDS(ON)=295mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems. | ANPECAnpec Electronics Corp 茂达电子 | |||
N-ChannelEnhancementModeMOSFET Features •20V/1.5A,RDS(ON)=195mΩ(typ.)@VGS=4.5V RDS(ON)=295mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPower | ANPECAnpec Electronics Corp 茂达电子 | |||
N-ChannelEnhancementModeMOSFET Features •20V/1.5A, RDS(ON)=195mΩ(typ.)@VGS=4.5V RDS(ON)=295mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems. | ANPECAnpec Electronics Corp 茂达电子 | |||
N-ChannelEnhancementModeMOSFET Features •20V/1.5A, RDS(ON)=195mΩ(typ.)@VGS=4.5V RDS(ON)=295mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems. | ANPECAnpec Electronics Corp 茂达电子 | |||
N-ChannelEnhancementModeMOSFET Features •20V/1.5A, RDS(ON)=195mΩ(typ.)@VGS=4.5V RDS(ON)=295mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems. | ANPECAnpec Electronics Corp 茂达电子 | |||
N-ChannelEnhancementModeMOSFET Features •20V/1.5A, RDS(ON)=195mΩ(typ.)@VGS=4.5V RDS(ON)=295mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems. | ANPECAnpec Electronics Corp 茂达电子 |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IDW |
2005 |
100 |
原装正品现货供应 |
询价 | |||
IDW |
最新 |
100 |
原装正品 现货供应 价格优 |
询价 | |||
IDW |
23+ |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 | |||
BOURNS |
2023+ |
16800 |
芯为科技只做原装 |
询价 | |||
BOURNS |
20+ |
电感器 |
962 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Bourns |
22+ |
NA |
109 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
BOURNS |
23+ |
插件,D=1.3mm |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
Bourns Inc. |
24+ |
径向,垂直(开放式) |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 | ||
PHILIPS |
04+ |
QFN16 |
109 |
询价 | |||
Abbatron/HHSmith |
新 |
5 |
全新原装 货期两周 |
询价 |
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