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1N60G-TND-R

N-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

1N60H

1A竊?00VN-CHANNELMOSFET

KIAGuangdong Keyia Semiconductor Technology Co., Ltd

可易亚半导体广东可易亚半导体科技有限公司

1N60-KW

N-CHANNELENHANCEMENT

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

1N60L-TMS-T

N-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

1N60L-TND-R

N-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

1N60P

SMALLSIGNALSCHOTTKYDIODES

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

1N60P

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Metal-on-siliconjunction,majoritycarrierconduction •Highcurrentcapability,Lowforwardvoltagedrop •ExtremelylowreversecurrentIR •Ultraspeedswitchingcharacteristics •Smalltemperaturecoefficientofforwardcharacteristics •Satisfactorywavedetectionefficiency

GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd

星合明辉电子山东星合明辉电子有限公司

1N60P

40VDetectionswitchtube

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

1N60P

SMALLSIGNALSCHOTTKYDIODES

ReverseVoltage-40to45Volts ForwardCurrent-0.03/0.05Amperes FEATURES Fastswitchingforhighefficiency Lowreverseleakage Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed 250C/10seconds,0.375”(9.5mm)leadlength,5lbs.(2.3kg)tension

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

1N60P

POINTCONTACTGERMANIUMDIODE

PointContactGermaniumDiodes 1N60isapointcontactdiodeemployingN-fromGermaniumandgivesanefficientandexcellentlinearitywhenusedinTVimagedetection,FMdetection,radio,AMdetection,etc.

SEMTECH

Semtech Corporation

1N60P

SchottkyBarrierDiode

Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

1N60P

TECHNICALSPECIFICATIONSOFSMALLSIGNALSCHOTTKYDIODES

FEATURES *Metalsiliconjunction,majoritycarrierconduction. *Highcurrentcapability,lowforwardvoltagedrop. *ExtremelylowreversecurrentIR *Ultraspeedswitchingcharacteristics *Smalltemperaturecoefficientofforwardcharacteristics *SatisfactoryWavedetectionefficiency

DCCOMDc Components

直流元件直流元件有限公司

1N60P

SchottkyBarrierRectifier

Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃

TGS

Tiger Electronic Co.,Ltd

1N60P

SchottkyBarrierRectifier

Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) •MoistureSensitivityLevel1 MaximumRatings •Storage&

MCCMicro Commercial Components

美微科美微科半导体公司

1N60P

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Metal-on-siliconjunction,majoritycarrierconduction •Highcurrentcapability,Lowforwardvoltagedrop •ExtremelylowreversecurrentIR •Ultraspeedswitchingcharacteristics •Smalltemperaturecoefficientofforwardcharacteristics •Satisfactorywavedetectionefficiency

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

1N60P

SMALLSIGNALSCHOTTKYDIODE

FEATURES ●Metal-on-siliconjunction,majoritycarrierconduction ●Highcurrentcapability,Lowforwardvoltagedrop ●ExtremelylowreversecurrentIr ●Ultraspeedswitchingcharacteristics ●Smalltemperaturecoefficientofforwardcharacteristics ●SatisfactoryWavedetectio

DIOTECH

Diotech Company.

1N60P

POINTCONTACTGERMANIUMDIODES

POINTCONTACTGERMANIUMDIODES 1N60isapointcontactdiodeemployingN-fromGermaniumandgivesanefficientandexcellentlinearitywhenusedinTVimagedetection,FMdetection,radio,AMdetection,etc.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

1N60P

SMALLSIGNALSCHOTTKYDIODES

Features ◇Metalsilliconjunctionmajoritycarrierconduction ◇Highcurrentcapability,Lowforwardvoltagedrop ◇ExtremelylowreversecurrentIR ◇Ultraspeedswitchingcharacteristics ◇Smalltemperaturecoefficientofforwardcharacteristics ◇Satisfactorywavedetectionefficiency ◇

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

1N60P

SchottkyBarrierDiodesSMALLSIGNALSCHOTTKYDIODES30m/50mAMPERES40/45VOLTS

Features: *HighReliability *LowReverseCurrentandLowForwardVoltage Applications: *LowCurrentRectificationandHighSpeedSwitching

WEITRONWEITRON

威堂電子科技

1N60P

GERMANIUMDIODES

Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione

DAESAN

Daesan Electronics Corp.

供应商型号品牌批号封装库存备注价格
UTC
17+
TO92排带
3000
全新原装环保现货
询价
UTC/友顺
2021+
TO126
100000
原装现货
询价
UTC
23/22+
TO126
6000
20年老代理.原厂技术支持
询价
UTC
22+
TO92
25000
原装现货,价格优惠,假一罚十
询价
UTC
21+
TO92
56030
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
UTC
2235+
TO92
5882
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
UTC
2023+
TO92
700000
柒号芯城跟原厂的距离只有0.07公分
询价
UTC
2022+
TO92
6014
询价
UTC
22+
TO-92
20000
原装正品价格优惠,志同道合共谋发展
询价
UTC/友顺
24+
TO-92
860000
明嘉莱只做原装正品现货
询价
更多1N60LT/B供应商 更新时间2024-6-2 14:26:00