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1N5546C

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

1N5546C

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5546C

包装:散装 封装/外壳:DO-204AH,DO-35,轴向 类别:分立半导体产品 二极管 - 齐纳 - 单 描述:VOLTAGE REGULATOR

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

1N5546C-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5546CUR

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5546CUR

Low Voltage Surface Mount 500 mW Avalanche Diodes

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5546CUR-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5546C/TR

包装:卷带(TR) 封装/外壳:DO-204AH,DO-35,轴向 类别:分立半导体产品 二极管 - 齐纳 - 单 描述:VOLTAGE REGULATOR

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

1N5546

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

1N5546

LOWVOLTAGEAVALANCHEDIODESDO-35

FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5546

LowVoltageAvalanche500mWZenerDiodesDO-35

FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5546

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

1N5546

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5546A

LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES

LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES LOWVOLTAGEAVALANCHEZENERDIODES 400MILLIWATTS 3.3THRU33VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

1N5546A

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5546A

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

1N5546AUR

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5546B

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

1N5546B

LOWREVERSELEAKAGECHARACTERISTICS

•1N5518-1THRU1N5546B-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •LOWREVERSELEAKAGECHARACTERISTICS •LOWNOISECHARACTERISTICS •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED

CDI-DIODE

Compensated Deuices Incorporated

1N5546B

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

产品属性

  • 产品编号:

    1N5546C

  • 制造商:

    Microchip Technology

  • 类别:

    分立半导体产品 > 二极管 - 齐纳 - 单

  • 包装:

    散装

  • 容差:

    ±2%

  • 工作温度:

    -65°C ~ 175°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    DO-204AH,DO-35,轴向

  • 供应商器件封装:

    DO-35(DO-204AH)

  • 描述:

    VOLTAGE REGULATOR

供应商型号品牌批号封装库存备注价格
MOTOROLA/摩托罗拉
2021+
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
GE
23+
NA
39960
只做进口原装,终端工厂免费送样
询价
MICROS/NSC
1676
专营铁帽CANCDIP
询价
2000
50
询价
Microsemi
1942+
N/A
474
加我qq或微信,了解更多详细信息,体验一站式购物
询价
MICROSEMI
1809+
SMD
326
就找我吧!--邀您体验愉快问购元件!
询价
Microchip Technology
21+
PowerDI3333-8
21000
专业分立半导体,原装渠道正品现货
询价
31a3aGLSdc200Rohs
10000
全新原装现货 样品可售
询价
Vishay(威世)
2021/2022+
标准封装
6500
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
1N5550
5
5
询价
更多1N5546C供应商 更新时间2024-6-4 14:12:00