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1N5529D

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

1N5529D

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5529D

包装:卷带(TR) 封装/外壳:DO-204AH,DO-35,轴向 类别:分立半导体产品 二极管 - 齐纳 - 单 描述:VOLTAGE REGULATOR

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

1N5529D-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5529DUR

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5529DUR

Low Voltage Surface Mount 500 mW Avalanche Diodes

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5529DUR-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5529D/TR

包装:卷带(TR) 封装/外壳:DO-204AH,DO-35,轴向 类别:分立半导体产品 二极管 - 齐纳 - 单 描述:VOLTAGE REGULATOR

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

1N5529

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

1N5529

LOWVOLTAGEAVALANCHEZENERDIODESHIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE

LOWVOLTAGEAVALANCHEZENERDIODES HIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE 1.PackageStyleDO-7 2.SuffixdenotesVztolerance:nonsuffix±20,Asuffix±10:Ir@Vr1,Vz,+Vfonly.SuffixB±5:Ir@Vr2,Vz,DVz,Vf,ND. 3.Measuredwith10,60HzACsuperimposedonIzt. 4.Measuredfrom

KNOXKnox Semiconductor, Inc

Knox Semiconductor, Inc

1N5529

LOWVOLTAGEAVALANCHEDIODESDO-35

FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5529

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5529

LowVoltageAvalanche500mWZenerDiodesDO-35

FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5529

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

1N5529A

LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES

LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES LOWVOLTAGEAVALANCHEZENERDIODES 400MILLIWATTS 3.3THRU33VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

1N5529A

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5529A

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

1N5529AUR

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5529B

LOWREVERSELEAKAGECHARACTERISTICS

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5529B

0.5WZenerDiode

Features SharpReverseCharacteristics LowReverseCurrentLevels HighReliabilityGoldBackMetal HighReliabilityTestedGrades.

SS

Silicon Supplies

产品属性

  • 产品编号:

    1N5529D

  • 制造商:

    Microchip Technology

  • 类别:

    分立半导体产品 > 二极管 - 齐纳 - 单

  • 包装:

    卷带(TR)

  • 容差:

    ±1%

  • 工作温度:

    -65°C ~ 175°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    DO-204AH,DO-35,轴向

  • 供应商器件封装:

    DO-35(DO-204AH)

  • 描述:

    VOLTAGE REGULATOR

供应商型号品牌批号封装库存备注价格
23+
N/A
67000
一级代理放心采购
询价
ASI
*
B-23
100
现货库存
询价
ASI
B-23
100
原装现货 实单可谈
询价
MICROSEMI
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
询价
MICROSEMI
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
MICROSEMI
23+
7600
专注配单,只做原装进口现货
询价
MICROSEMI
23+
7600
专注配单,只做原装进口现货
询价
MICROSEMI
2306+
MODULE
514
优势代理渠道,原装现货,可全系列订货
询价
Microsemi
1942+
N/A
908
加我qq或微信,了解更多详细信息,体验一站式购物
询价
CDI-DIODE
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
更多1N5529D供应商 更新时间2024-6-19 11:06:00