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1N5189US中文资料PDF规格书

1N5189US
厂商型号

1N5189US

参数属性

1N5189US 封装/外壳为E-MELF;包装为散装;类别为分立半导体产品 > 二极管 - 整流器 - 单;产品描述:DIODE GEN PURP 500V 3A D5B

功能描述

VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS

文件大小

270.08 Kbytes

页面数量

2

生产厂商 Microsemi Corporation
企业简称

Microsemi美高森美

中文名称

美高森美公司官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-6-14 18:04:00

1N5189US规格书详情

DESCRIPTION

This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/424 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 Amp rated rectifiers for working peak reverse voltages from 100 to 600 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix. Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.

FEATURES

• Popular JEDEC registered 1N5186 to 1N5190 series

• Voidless hermetically sealed glass package

• Triple-Layer Passivation

• Internal “Category I” Metallurgical bonds

• Working Peak Reverse Voltage 100 to 600 Volts.

• JAN, JANTX, and JANTXV available per MIL-PRF-19500/424

• Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix

APPLICATIONS / BENEFITS

• Fast recovery 3 Amp rectifiers 100 to 600 V

• Military and other high-reliability applications

• General rectifier applications including bridges, half-bridges, catch diodes, etc.

• High forward surge current capability

• Extremely robust construction

• Low thermal resistance

• Controlled avalanche with peak reverse power capability

• Inherently radiation hard as described in Microsemi MicroNote 050

产品属性

  • 产品编号:

    1N5189US

  • 制造商:

    Microchip Technology

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 包装:

    散装

  • 二极管类型:

    标准

  • 电流 - 平均整流 (Io):

    3A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    E-MELF

  • 供应商器件封装:

    D-5B

  • 工作温度 - 结:

    -65°C ~ 175°C

  • 描述:

    DIODE GEN PURP 500V 3A D5B

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CHINA
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