| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
1N1186 | Military Silicon Power Rectifier HIGHRELIABILITYSILICONPOWERRECTIFIER QualifiedperMIL-PRF-19500/297 •GlassPassivatedDie •GlasstoMetalSealConstruction •500AmpsSurgeRating •VRRMto1000Volts | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
1N1186 | Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES •Lowleakagecurrentseries •Goodsurgecurrentcapabilityupto1000A •Canbesuppliedtomeetstringentmilitary,aerospaceandotherhighreliabilityrequirements •ComplianttoRoHSdirective2002/95/EC | VishayVishay Siliconix 威世科技 | Vishay | |
1N1186 | Silicon Standard Recovery Diode Features •HighSurgeCapability •Typesfrom50to300VVRRM •NotESDSensitive | GENESIC GeneSiC Semiconductor, Inc. | GENESIC | |
1N1186 | STANDARD RECOVERY RECTIFIER STANDARDRECOVERYRECTIFIER | DIGITRON Digitron Semiconductors | DIGITRON | |
1N1186 | DEVICE HIGH POWER STANDARD Features •HighSurgeCapability •Typesupto1000V | AMERICASEMI America Semiconductor, LLC | AMERICASEMI | |
1N1186 | Silicon-Power Rectifiers Silicon-PowerRectifiers •Nominalcurrent35A •Repetitivepeakreversevoltage50~1000V •MetalcaseDO-5 •Weightapprox.6g •Standardpolarity:Cathodetostud •IndexR:Anodetostud •Standardpackaging:bulk | DiotecDIOTEC 德欧泰克 | Diotec | |
1N1186 | Silicon Power Rectifier SiliconPowerRectifier •GlassPassivatedDie •800Asurgerating •Glasstometalconstruction •VRRMto1000V | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
1N1186 | 35,40,and 60 Amp Power Silicon Rectifier Diodes 35,40,and60AmpPowerSiliconRectifierDiodes | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | |
1N1186 | Silicon Power Rectifier SiliconPowerRectifier •GlassPassivatedDie •800Asurgerating •Glasstometalconstruction •VRRMto1000V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | |
1N1186 | HIGH RELIABILITY SILICON POWER RECTIFIER | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
1N1186 | Power Silicon Rectifier Diodes, 35 A/40 A/60 A | VishayVishay Siliconix 威世科技 | Vishay | |
1N1186 | Silicon Power Rectifier | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
1N1186 | Silicon-Power-Rectifiers | DiotecDIOTEC 德欧泰克 | Diotec | |
1N1186 | Silicon Standard Recovery Diode | GENESIC GeneSiC Semiconductor, Inc. | GENESIC | |
1N1186 | Standard Recovery Diode, 35A | NAINA Naina Semiconductor ltd. | NAINA | |
1N1186 | Silicon Standard Recovery Diode | GENESIC GeneSiC Semiconductor, Inc. | GENESIC | |
1N1186 | 包装：散装 封装/外壳：DO-203AB，DO-5，接线柱 类别：分立半导体产品 二极管 - 整流器 - 单 描述：STANDARD RECTIFIER | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | Microchip | |
1N1186 | 包装：卷带（TR） 封装/外壳：DO-203AB，DO-5，接线柱 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 200V 35A DO5 | GeneSiC Semiconductor GeneSiC Semiconductor | GeneSiC Semiconductor | |
DEVICE HIGH POWER STANDARD Features •HighSurgeCapability •Typesupto600VVRRM | AMERICASEMI America Semiconductor, LLC | AMERICASEMI | ||
Silicon Power Rectifier SiliconPowerRectifier •GlassPassivatedDie •800Asurgerating •Glasstometalconstruction •VRRMto1000V | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
产品属性
- 产品编号：
1N1186
- 制造商：
Microchip Technology
- 类别：
分立半导体产品 > 二极管 - 整流器 - 单
- 包装：
散装
- 二极管类型：
标准型，反极性
- 电流 - 平均整流 (Io)：
35A
- 速度：
标准恢复 >500ns，> 200mA（Io）
- 安装类型：
接线柱安装
- 封装/外壳：
DO-203AB，DO-5，接线柱
- 供应商器件封装：
DO-5
- 工作温度 - 结：
-65°C ~ 175°C
- 描述：
STANDARD RECTIFIER
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2016+ |
DO-5 |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
EIC |
98 |
200 |
询价 | ||||
IR |
16+ |
DO-5 |
1700 |
原装现货假一罚十 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR |
专业铁帽 |
DO-5 |
1700 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
IR |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
询价 | ||
MOTO/IR |
2023+ |
DO-5 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
M |
18+ |
MODULE |
2050 |
公司大量全新原装 正品 随时可以发货 |
询价 | ||
M |
23+ |
螺丝 |
1499 |
询价 | |||
GeneSiC |
1935+ |
N/A |
55 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 |
相关规格书
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