零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
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JJW | ||||
N-ChannelEnhancementModeFieldEffectTransistor | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.22Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TMOSE?묯ETPowerFieldEffectTransistorDPAKforSurfaceMount | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFETs,11A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelPowerMosfets, | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP | ||
N-ChannelPowerMOSFETs,11A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-ChannelPowerMOSFETs,11A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
TMOSPOWERFETs10AMPERES100VOLTSRDS(on)=0.25OHM TMOSIVPowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate Thisadvanced“E”seriesofTMOSpowerMOSFETsisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thesenewenergyefficientdevicesalsoofferdrain–to–sourcediodeswithfastrecovery | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSPOWERFET10AMPERES100VOLTSRDS(on)=0.22OHMS LogicLevelTMOSE-FET™PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecovery | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
PowerMOSFET10A,100V,LogicLevel,N?묬hannelTO??20 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET10A,100V,LogicLevel,N?묬hannelTO??20 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
PowerMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuuitableforsurfacemounting.ThedeviceisintendedforuseinSwitchedModePowerSupplies(SMPS),motorcontrol,welding,DC/DCandAC/DCconverters,andingeneralpurposeswitchingapplicatio | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
PowerMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelope.ThedeviceisintendedforuseinSwitchedModePowerSupplies(SMPS),motorcontrol,welding,DC/DCandAC/DCconverters,andingeneralpurposeswitchingapplications. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
100VN-ChannelMOSFET | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VB |
2019 |
P-TO263-3-2 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
UTC |
2020+ |
TO-252 |
32630 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
CMOS/场效应半导体 |
23+ |
TO-252-4L |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
infineon/ |
23+ |
SOT-263 |
8000 |
终端免费提供样品 可开13%增值税发票 |
询价 | ||
INFINEON |
23+ |
SOT-263 |
8000 |
专注配单,只做原装进口现货 |
询价 | ||
VBSEMI |
19+ |
P-TO263-3-2 |
29600 |
绝对原装现货,价格优势! |
询价 | ||
INFINEON |
23+ |
SOT-263 |
8000 |
专注配单,只做原装进口现货 |
询价 | ||
进口原装 |
23+ |
TO-247 |
3000 |
全新原装 |
询价 | ||
FSC |
2023+ |
TO-220 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
FSC |
TO-220 |
22+ |
6000 |
十年配单,只做原装 |
询价 |
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