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04N60S5

N-Channel 6 50V (D-S) Power MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

ISPD04N60S5

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISPP04N60S5

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.95Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice per

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPB04N60S5

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

SPB04N60S5

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPB04N60S5

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPB04N60S5

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPD04N60S5

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPD04N60S5

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPD04N60S5

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPD04N60S5

PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

SPDU04N60S5

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPN04N60S5

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inSOT223 •Ultralowgatecharge •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPN04N60S5

NewrevolutionaryhighvoltagetechnologyWorldwidebestRDSinSOT223

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPP04N60S5

NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPP04N60S5

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPP04N60S5

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.95Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice per

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPP04N60S5

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPPB04N60S5

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPU04N60S5

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

供应商型号品牌批号封装库存备注价格
08+(pbfree)
8866
询价
INFINEON
2020+
TO252
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
23+
N/A
36500
正品授权货源可靠
询价
VB
2019
TO-220AB
55000
绝对原装正品假一罚十!
询价
INFINEON/英飞凌
2020+
TO-252
12000
原装正品现货
询价
infineon
2020+
P-TO252
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
FUJITSU/富士通
23+
TO-220AB
69820
终端可以免费供样,支持BOM配单!
询价
INFINEON/英飞凌
0405
TO-252
800
询价
17
22+
TO-263
450
原装现货假一赔十
询价
HI-HONE
22+
SOT223
2600
原装现货假一赔十
询价
更多04N60S5供应商 更新时间2024-5-3 16:30:00